A study of shallow PN junction technology for VLSI by rapid thermal annealing
- 1. Beijing Normal Univ., BJ (China). Inst. of Low Energy Nuclear Physics
Description
The RTA properties of As implanted into Si and implanted through a SiO2 film into Si are studied. The fabrication of PN junction with a depth of 0.1-0.6 μm has been optimized. The processes of lattice restoration and defect density change during RTA are observed by TEM. It is found that if longer annealing time and hot target implantation are used the residual defect density can be reduced greatly. The results show that diffusion coefficient is increased with increasing of ion flux. The relation of diffsuion coefficient with annealing and implantation conditions are given. The infuences of the above mentioned conditions on leakage current of PN junction have been studied. The conditions for making PN junction located out of the radiation damaged region are discussed
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 13
- Journal Issue
- 9
- Series
- Nucl. Tech.
- Journal Page Range
- 523-529
- ISSN
- 0253-3219
- CODEN
- NUTED
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 22081964
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARSENIC IONS; DIFFUSION; FABRICATION; INTEGRATED CIRCUITS; ION IMPLANTATION; LEAKAGE CURRENT; OPTIMIZATION; P-N JUNCTIONS; SILICON; TRANSMISSION ELECTRON MICROSCO
- Descriptors DEC
- CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; ELECTRON MICROSCOPY; ELECTRONIC CIRCUITS; ELEMENTS; HEAT TREATMENTS; IONS; MICROSCOPY; SEMICONDUCTOR JUNCTIONS; SEMIMETALS