The effects of oxygen implantation on n-type layers formed by silicon implantation in gallium arsenide

The effects of oxygen implantation into n-type layers formed by silicon implantation have been studied using the capacitance voltage technique. The results suggest that the compensating behaviour is complicated but can be split broadly into implantation damage related and oxygen related compensation. The idea that localised areas of stoichiometric imbalance may describe the results obtained is put forward, an idea which may also explain the n-type dopant sensitivity of the compensation observed by other authors. (author)