Ion beam mixing of aluminium films on fused SiO2

The use of ion beam mixing in producing subsurface aluminium films in fused SiO2 was studied. In the measurement of aluminium profiles in samples prepared by implanting 20, 40 and 60 keV 27Al+ ions to fluences of from 1.2 x 1016 to 1.9 x 1017 ions cm-2 into SiO2 or SiO2 covered by an aluminium film 100 or 200 A thick, the nuclear resonance broadening technique was used through the reaction 27Al(p,γ)28Si. The radiation damage in SiO2 and the disappearance of the aluminium films were studied by the use of IR reflection spectroscopy. The experimental range profiles of aluminium in fused SiO2 were observed to agree with the values obtained through Monte Carlo calculations. This agreement suggests that the simultaneously calculated damage profiles describe the actual damage distributions well. (Auth.)