Fabrication of optical waveguides in KTiOAsO4 by He or Si ion implantation

Planar waveguides were fabricated in nonlinear crystal KTiOAsO4 by the implantation of 2.6 MeV He+ ions (at a dose of 2 x 1016 ions/cm2) or 3.0 MeV Si+ ions (at a dose of 2 x 1015 ions/cm2) at room temperature. The prism-coupling method was carried out to measure the dark modes in the waveguides and reflectivity calculation method was applied to fitting the refractive index profiles of the waveguides. TRIM'98 (Transport and Range of Ions in Matter) code was used to simulate the damage profile in KTiOAsO4 by 2.6 MeV He+ or 3.0 MeV Si+ ion implantation, which is helpful to a better understanding of the waveguide formation