Physical properties characterization of WO3 films grown by hot-filament metal oxide deposition
Creators
- 1. Centro de Investigacion en Biotecnologia Aplicada del Instituto Politecnico Nacional, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico)
- 2. Preparatoria 'Simon Bolivar' de la Benemerita Universidad Autonoma de Puebla, 4 Oriente 408, Col. Centro, Atlixco, Puebla, C. P. 74200 (Mexico)
- 3. Facultad de Ciencias Quimicas de la Benemerita Universidad Autonoma Puebla, 14 Sur y Av. San Claudio, Col. San Manuel, Puebla, Puebla, C. P. 72570 (Mexico)
- 4. Unidad Profesional Interdisciplinaria de Biotecnologia del Instituto Politecnico Nacional, Avenida Acueducto S/N, Col. Barrio la Laguna, Ticoman, Del. Gustavo A. Madero, Mexico, D.F. 07340 (Mexico)
Description
WO3 is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains that WO3 presents mainly monoclinic crystalline phase. The chemical stoichiometry is obtained by X-ray Photoelectron Spectroscopy (XPS). The IR spectrum of the as-grown WO3 presents broad peaks in the range of 1100 to 3600 cm-1. A broad band in the 2200 to 3600 cm-1 region and the peaks sited at 1645 and 1432 cm-1 are well resolved, which are originated from moisture and are assigned to ν(OH) and δ(OH) modes of adsorbed water and the corresponding tungsten oxide vibrations are in infrared region from 400 to 1453 cm-1 and around 3492 cm-1, which correspond to tungsten-oxygen (W-O) stretching, bending and lattice modes. The Raman spectrum shows intense peaks at 801, 710, 262 and 61 cm-1 that are typical Raman peaks of crystalline WO3 (m-phase) that correspond to stretching vibrations of the bridging oxygen, which are assigned to W-O stretching (ν) and W-O bending (δ) modes, respectively. By transmittance measurements obtains that the WO3 band gap can be varied from 2.92 to 3.13 eV in the investigated annealing temperature range.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2010.03.061Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2010.03.061;
- PII
- S0921-5107(10)00230-8;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 174
- Journal Issue
- 1-3
- Journal Page Range
- p. 182-186
- ISSN
- 0921-5107
- CODEN
- MSBTEK
Conference
- Title
- 18. international materials research congress: Symposium on advances in semiconducting materials
- Acronym
- IMRC 2009
- Dates
- 16-20 Aug 2009
- Place
- Cancun (Mexico)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43030460
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ATMOSPHERIC PRESSURE; BENDING; DEPOSITION; ELECTROCHROMISM; FILAMENTS; FILMS; INFRARED SPECTRA; MONOCLINIC LATTICES; PEAKS; PHYSICAL PROPERTIES; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; TEMPERATURE RANGE; TUNGSTATES; TUNGSTEN; TUNGSTEN OXIDES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DEFORMATION; DIFFRACTION; ELECTRON SPECTROSCOPY; ELECTRO-OPTICAL EFFECTS; ELEMENTS; HEAT TREATMENTS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; SCATTERING; SPECTRA; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.