Published October 25, 2010 | Version v1
Journal article

Physical properties characterization of WO3 films grown by hot-filament metal oxide deposition

  • 1. Centro de Investigacion en Biotecnologia Aplicada del Instituto Politecnico Nacional, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico)
  • 2. Preparatoria 'Simon Bolivar' de la Benemerita Universidad Autonoma de Puebla, 4 Oriente 408, Col. Centro, Atlixco, Puebla, C. P. 74200 (Mexico)
  • 3. Facultad de Ciencias Quimicas de la Benemerita Universidad Autonoma Puebla, 14 Sur y Av. San Claudio, Col. San Manuel, Puebla, Puebla, C. P. 72570 (Mexico)
  • 4. Unidad Profesional Interdisciplinaria de Biotecnologia del Instituto Politecnico Nacional, Avenida Acueducto S/N, Col. Barrio la Laguna, Ticoman, Del. Gustavo A. Madero, Mexico, D.F. 07340 (Mexico)

Description

WO3 is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains that WO3 presents mainly monoclinic crystalline phase. The chemical stoichiometry is obtained by X-ray Photoelectron Spectroscopy (XPS). The IR spectrum of the as-grown WO3 presents broad peaks in the range of 1100 to 3600 cm-1. A broad band in the 2200 to 3600 cm-1 region and the peaks sited at 1645 and 1432 cm-1 are well resolved, which are originated from moisture and are assigned to ν(OH) and δ(OH) modes of adsorbed water and the corresponding tungsten oxide vibrations are in infrared region from 400 to 1453 cm-1 and around 3492 cm-1, which correspond to tungsten-oxygen (W-O) stretching, bending and lattice modes. The Raman spectrum shows intense peaks at 801, 710, 262 and 61 cm-1 that are typical Raman peaks of crystalline WO3 (m-phase) that correspond to stretching vibrations of the bridging oxygen, which are assigned to W-O stretching (ν) and W-O bending (δ) modes, respectively. By transmittance measurements obtains that the WO3 band gap can be varied from 2.92 to 3.13 eV in the investigated annealing temperature range.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.mseb.2010.03.061

Additional details

Identifiers

DOI
10.1016/j.mseb.2010.03.061;
PII
S0921-5107(10)00230-8;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
174
Journal Issue
1-3
Journal Page Range
p. 182-186
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
18. international materials research congress: Symposium on advances in semiconducting materials
Acronym
IMRC 2009
Dates
16-20 Aug 2009
Place
Cancun (Mexico)

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.