Published 1998 | Version v1
Journal article Metadata-only

Investigation of III-V semiconductor heterostructures

Creators

  • 1. Institute of Electron Technology, Warsaw (Poland)
  • 2. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 3. Kyoto Institute of Technology, Kyoto (Japan)
  • 4. Max-Planck Institut fuer Metallforschung, Stuttgaryt (Germany)

Description

In this paper an overview of analytical techniques necessary for characterization of the growth processes of III-V semiconductor heterostructures is given. The application of electron microscopic techniques as well as x-ray diffraction and photoluminescence is emphasized. The heterostructures discussed were grown by various techniques of epitaxy. (author)

Additional details

Publishing Information

Journal Title
Inzynieria Materialowa
Journal Volume
19
Journal Issue
4
Journal Page Range
p. 791-796
ISSN
0208-6247

Conference

Title
15. Physical Metallurgy and Materials Science Conference on Advanced Materials and Technology (AMT'98)
Dates
17-21 May 1998
Place
Cracow - Krynica (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
31002046
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; HETEROJUNCTIONS; INDIUM COMPOUNDS; MEETINGS; MICROSTRUCTURE; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; PNICTIDES; SCATTERING; SEMICONDUCTOR JUNCTIONS

Optional Information

Contract/Grant/Project number
KBN grants 8T11B.064.11 and 8T11B.064.14
Notes
11 refs, 8 figs