Published July 1981
| Version v1
Journal article
Indium thickness in the thermal resistence in GaAlAs/GaAs double heterostructure lasers
- 1. Universidade Estadual de Campinas (Brazil). Inst. de Fisica
Description
no abstract available
Additional details
Additional titles
- Original title (Portuguese)
- Influencia da espessura de indio na resistencia termica (RT) em lasers de dupla heteroestrutura de GaAlAs/GaAs
Publishing Information
- Journal Title
- Cienc. Cult. (Sao Paulo) Supl.
- Journal Volume
- 33
- Journal Issue
- 7
- Series
- Cienc. Cult. (Sao Paulo) Supl.
- Journal Page Range
- 201
Conference
- Title
- 33. Annual Meeting of the Brazilian Society for the Advancement of Science.
- Dates
- 8 - 15 Jul 1981.
- Place
- Salvador, Brazil.
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 13651924
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ALUMINIUM; ARSENIC; ELECTRODEPOSITION; GALLIUM; INDIUM; SEMICONDUCTOR LASERS; THERMAL CONDUCTIVITY; THICKNESS
- Descriptors DEC
- AMPLIFIERS; DEPOSITION; DIMENSIONS; ELECTROLYSIS; ELEMENTS; LASERS; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS; SOLID STATE LASERS; SURFACE COATING; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- Published in summary form only.