Published October 1, 2018 | Version v1
Journal article Metadata-only

Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

Creators

  • 1. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata 700009 (India)
  • 2. B.P. Poddar Institute of Management and Technology (ECE Dept), Kolkata 700052 (India)

Description

The double barrier quantum well (DBQW) resonant tunneling diode (RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge1−zCz on Si1−x−yGexSny heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/39/10/104003

Additional details

Identifiers

DOI
10.1088/1674-4926/39/10/104003;

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
39
Journal Issue
10
Journal Page Range
[5 p.]
ISSN
1674-4926

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51067347
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ALLOYS; CURRENT DENSITY; QUANTUM WELLS; TUNNEL DIODES; TUNNEL EFFECT
Descriptors DEC
NANOSTRUCTURES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES