Structural and electronic properties of chemically functionalized SnC monolayer: a first principles study
Creators
- 1. Computational Laboratory for Advanced Materials and Structures, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)
- 2. Department of Physics, Kermanshah Branch, Islamic Azad University, P O Box 6718997551, Kermanshah (Iran, Islamic Republic of)
- 3. Universidad Autónoma de Coahuila, Facultad de Ciencias Químicas, Ing. J. Cárdenas Valdez, Republica, 25280 Saltillo, Coahuila (Mexico)
- 4. Institute of Research and Development, Duy Tan University, Da Nang 550000 (Viet Nam)
- 5. Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla 72570 (Mexico)
- 6. Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)
- 7. Faculty of Engineering, Vietnamese German University, Thu Dau Mot City, Binh Duong Province (Viet Nam)
Description
We investigate the chemical functionalization effect on the structural and electronic properties of SnC monolayer using first-principles calculations. Specifically, the chlorinated-, fluorinated- and Janus-functionalized monolayers are considered. Based on our calculations, the pristine SnC monolayer is dynamically stable with a planar structure. Its electronic band gap calculated with the HSE06 hybrid functional is 2.371 eV. The inclusion of halogen atoms (F and Cl) destroys the planarity and transforms the hybridization from sp 2 to sp 3. The half-halogenation induces the metallization of the SnC monolayer, while the indirect-to-direct band gap transition can be reached by means of the full-halogenation and Janus-functionalization. Results show that the pristine SnC monolayer electronic structure can be effectively modulated by the chemical functionalization. Therefore, we hope that results presented herein can be of good reference for the SnC monolayer practical applications as well as other 2D materials. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1591/ab5d71Additional details
Identifiers
Publishing Information
- Journal Title
- Materials Research Express (Online)
- Journal Volume
- 7
- Journal Issue
- 1
- Journal Page Range
- [8 p.]
- ISSN
- 2053-1591
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52101022
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRONIC STRUCTURE; HALOGENATION; HALOGENS; HYBRIDIZATION; INCLUSIONS
- Descriptors DEC
- CHEMICAL REACTIONS; ELEMENTS; NONMETALS