Published April 21, 2011 | Version v1
Journal article

Development of large-area silicon photomultiplier detectors for PET applications at FBK

  • 1. Fondazione Bruno Kessler (FBK), Via Sommarive 18, I-38123 Trento Povo (Italy)

Description

This paper reports on the development of large-area silicon photomultiplier (SiPM) detectors specifically designed for positron emission tomography (PET) instruments. The sensors under study are monolithic arrays of two different types: a 2x2 array of ∼4x4 mm2 elements and an 8x8 array of 1.5x1.5 mm2 pixels. These devices are characterized at wafer level by means of an automatic test procedure, consisting of current-voltage curves in forward and reverse bias. The tests allowed selection of functioning devices and evaluation of the uniformity of basic parameters. Results of the electrical characterization are reported showing that acceptable values of yield together with rather uniform distribution of parameters have been obtained. Reliability of produced SiPMs has been proved by long-term accelerated stress tests.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2010.04.111

Additional details

Identifiers

DOI
10.1016/j.nima.2010.04.111;
PII
S0168-9002(10)00965-4;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
636
Journal Issue
1,Suppl
Journal Page Range
p. S208-S213
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
7. international 'Hiroshima' symposium on the development and application of semiconductor tracking detectors
Acronym
HSTD7 Hiroshima
Dates
29 Aug - 1 Sep 2009
Place
Hiroshima (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43054019
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DISTRIBUTION; ELECTRIC CONDUCTIVITY; EQUIPMENT; PHOTOMULTIPLIERS; POSITRON COMPUTED TOMOGRAPHY; RELIABILITY; SENSORS; SILICON; STRESSES
Descriptors DEC
COMPUTERIZED TOMOGRAPHY; DIAGNOSTIC TECHNIQUES; ELECTRICAL PROPERTIES; ELEMENTS; EMISSION COMPUTED TOMOGRAPHY; PHOTOTUBES; PHYSICAL PROPERTIES; SEMIMETALS; TOMOGRAPHY

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.