There is a newer version of the record available.

Published August 2020 | Version v1
Journal article

Fabrication of Al-doped ZnO nanoparticles and their application as a semiconductor-based gas sensor for the detection of ammonia

  • 1. Dayanand Science College. Thin Films and Materials Science Research Laboratory, Department of Physics (India)
  • 2. Department of Physics. Nanosensor Research Laboratory (India)

Description

A facile co-precipitation technique is used to fabricate ZnO and AZO (Al-doped ZnO) nanoparticles. It is analyzed and investigated that the effect of Al doping concentration has altered the structural and morphological properties of the nanoparticles. Increasing the concentration of doping has reduced the average crystallite size considerably in the range 18–24 nm. With the increased microstrain, we observe that bond length decreases for AZO nanoparticles. FESEM images indicate that morphology varies from the hexagonal crystalline phase of ZnO structure to the spherical shape of AZO samples. The UV–Vis spectroscopic studies showed that Al was incorporated into ZnO lattice as Al3+ due to the decreasing optical band gap of nanoparticles. The gas sensing responses of ZnO and AZO nanoparticles have been studied at optimum temperature with a low concentration of ammonia gas. The sensing studies revealed that the response of gas mainly relies on the size of the particles.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Materials Science. Materials in Electronics
Journal Volume
31
Journal Issue
15
Journal Page Range
p. 12579-12585
ISSN
0957-4522
CODEN
JSMEEV

Optional Information

Copyright
Copyright (c) 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020