Published 1989
| Version v1
Journal article
Spontaneous hydrogen injection into silicon
Description
In-situ capacitance-voltage (CV) profiling of the near-surface region of silicon has been used to measure hydrogen migration and acceptor passivation. A rapid in-bulk motion of H+ has been induced in reverse-bias annealed Schottky diodes. Spontaneous hydrogen injection into the near-surface of silicon has been observed in hydrogen depleted titanium-and aluminum-Schottky diodes. (author) 29 refs., 3 figs
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 38-41
- Series
- Mater. Sci. Forum.
- Journal Page Range
- 1057-1061
- ISSN
- 0255-5476
- CODEN
- MSFOE
Conference
- Title
- 15. International conference on defects in semiconductors (ICDS-15).
- Dates
- 22-26 Aug 1988.
- Place
- Budapest (Hungary).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 20062188
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ANNEALING; BORON; CARBON; CRYSTAL DOPING; DIFFUSION; HYDROGEN; P-TYPE CONDUCTORS; PASSIVATION; SCHOTTKY BARRIER DIODES; SILICON; TITANIUM
- Descriptors DEC
- ELEMENTS; HEAT TREATMENTS; MATERIALS; METALS; NONMETALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TRANSITION ELEMENTS