A study of the electrical stability characteristics of a PVDF organic thin film fabricated by using the thermal vapor deposition method

The purpose of the present study is to review the electrical stability characteristics of PVDF organic thin films fabricated by using the vapor deposition method. The abnormal increases in the relative dielectric constant and the dielectric loss in the regions of low frequency and high temperature are known to be caused by inclusion of impurity carriers in the PVDF organic thin films. In an attempt to elucidate this phenomenon, it has been confirmed that the values of lnJ and lnE are proportional to each other. These are generally a accepted properties of ionic conductivity in the evaluation of electrical-conductivity characteristics. This fact suggests, in other words, that the main carriers of the electrical-conductivity are ions. Also, the electrical stability characteristics improved with increasing substrate temperature. The results of this experimental study show an optimum substrate temperature for electrical-stability characteristics of 105 .deg. C