Published November 30, 2012 | Version v1
Journal article Metadata-only

Nearest-IR superluminescent diodes with a 100-nm spectral width

Creators

Description

This paper presents an experimental study of quantum well superluminescent diodes with an extremely thin (InGa)As active layer. Under cw injection, the output power of such diodes is several milliwatts, with a centre wavelength of 830 nm and emission bandwidth of about 100 nm. (letters)

Availability note (English)

Available from http://dx.doi.org/10.1070/QE2012v042n11ABEH014981

Additional details

Identifiers

DOI
10.1070/QE2012v042n11ABEH014981;

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
42
Journal Issue
11
Journal Page Range
p. 961-963
ISSN
1063-7818

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44025944
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
GALLIUM ARSENIDES; INDIUM ARSENIDES; LIGHT EMITTING DIODES; LINE WIDTHS; LUMINESCENCE; NEAR INFRARED RADIATION; QUANTUM WELLS; THIN FILMS; WAVELENGTHS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; EMISSION; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFRARED RADIATION; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES