Published May 2018 | Version v1
Journal article

Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography

  • 1. Russian Academy of Science, Kirensky Institute of Physics (Russian Federation)

Description

For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a directwrite technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe3Si/Au structure.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
52
Journal Issue
5
Journal Page Range
p. 636-638
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49100935
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ACCURACY; ACETONITRILE; IRON SILICIDES; MICROELECTRONICS; MICROSCOPES; NANOSTRUCTURES; POLYMERS; PROBES; RESOLUTION; SILICON NITRIDES; SUBSTRATES
Descriptors DEC
IRON COMPOUNDS; NITRIDES; NITRILES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; PNICTIDES; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2018 Pleiades Publishing, Ltd.