Published May 2010 | Version v1
Miscellaneous Open

Research the impact of electrons radiation on generation characteristics of Si-SiO2 interface

  • 1. Andizhan State University, Andizhan (Uzbekistan)

Description

no abstract available

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Part of:
Proceedings of II republic scientific conference 'Actual problems of modern physics and astronomy'

Additional details

Additional titles

Original title (Uzbek)
Ehlekronlar nurlanishining Si-SiO

Publishing Information

Publisher
Karshi davlat universiteti
Imprint Place
Karshi (Uzbekistan)
Imprint Title
Proceedings of II republic scientific conference 'Actual problems of modern physics and astronomy'
Imprint Pagination
[235 p.]
Journal Page Range
3 p.
Report number
INIS-UZ--169

Conference

Title
2. republic scientific conference on actual problems of modern physics and astronomy
Original Conference Title
II respublikanskaya nauchnaya konferentsiya 'Aktual'nye problemy sovremennoj fiziki i astronomii'
Dates
21 May 2010
Place
Karshi (Uzbekistan)

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
41086905
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
CHARGE CARRIERS; ELECTRONS; HARMONIC GENERATION; INTERFACES; MIS TRANSISTORS; POTENTIALS; RADIATION EFFECTS; RECOMBINATION; SILICON; SILICON OXIDES
Descriptors DEC
CHALCOGENIDES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FREQUENCY MIXING; LEPTONS; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS

Optional Information

Notes
refs. 3, figs. 2 Imprint:Materialy II respublikanskoj nauchnoj konferentsii 'Aktual'nye problemy sovremennoj fiziki i astronomii'