Published May 2010
| Version v1
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Research the impact of electrons radiation on generation characteristics of Si-SiO2 interface
- 1. Andizhan State University, Andizhan (Uzbekistan)
Description
no abstract available
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41086905.pdf
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Additional details
Additional titles
- Original title (Uzbek)
- Ehlekronlar nurlanishining Si-SiO
Publishing Information
- Publisher
- Karshi davlat universiteti
- Imprint Place
- Karshi (Uzbekistan)
- Imprint Title
- Proceedings of II republic scientific conference 'Actual problems of modern physics and astronomy'
- Imprint Pagination
- [235 p.]
- Journal Page Range
- 3 p.
- Report number
- INIS-UZ--169
Conference
- Title
- 2. republic scientific conference on actual problems of modern physics and astronomy
- Original Conference Title
- II respublikanskaya nauchnaya konferentsiya 'Aktual'nye problemy sovremennoj fiziki i astronomii'
- Dates
- 21 May 2010
- Place
- Karshi (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 41086905
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHARGE CARRIERS; ELECTRONS; HARMONIC GENERATION; INTERFACES; MIS TRANSISTORS; POTENTIALS; RADIATION EFFECTS; RECOMBINATION; SILICON; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FREQUENCY MIXING; LEPTONS; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS
Optional Information
- Notes
- refs. 3, figs. 2 Imprint:Materialy II respublikanskoj nauchnoj konferentsii 'Aktual'nye problemy sovremennoj fiziki i astronomii'