Published January 1999
| Version v1
Journal article
A comparative study of TSC, TSCAP, DLTS analysis in irradiated Si detectors
- 1. INFN, Istituto Nazionale di Fisica Nucleare, Florence (Italy)
- 2. Florence Univ. (Italy). Dip. di Fisica
Description
A quantitative comparison among thermal spectroscopy techniques has been carried out to analyse the lattice disorder. For this purpose thermally stimulated capacitance and current (TSCAP, TSC), capacitance and current deep level transient spectroscopy (C-DLTS, I-DLTS) have been applied on a sample irradiated with 5·1011 p/cm2. A complete characterisation of the material has been performed comparing the results obtained with the different methods. Numerical procedures have been developed in order to discriminate single deep level contributions to the spectra. The advantages and the limits of each technique are also discussed
Additional details
Publishing Information
- Journal Title
- Nuovo Cimento della Societa Italiana di Fisica. A, Nuclei Particles and Fields
- Journal Volume
- 112A
- Journal Issue
- 1-2
- Journal Page Range
- p. 23-33
- ISSN
- 1124-1861
INIS
- Country of Publication
- Italy
- Country of Input or Organization
- Italy
- INIS RN
- 31001796
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; RADIATION DETECTORS; SEMICONDUCTOR DEVICES; SI SEMICONDUCTOR DETECTORS; SPECTROSCOPY
- Descriptors DEC
- EVALUATION; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS