Effects of temperature on the grain growth of lnSb thin films

Indium antimonide (lnSb) is one of the most widely used materials in the field of infrared detectors in the 35 μm wavelength range owing to its high electron mobility and low energy band gap 0.18 eV at room temperature. It is used for the fabrication of high speed Hall and optoelectronic devices. The n-type lndium antimonide thin films at different substrate temperature (50℃ - 70℃) has been fabricated by electron beam evaporation technique at pressure 10-5 torr. The X-ray diffraction patterns reveal that films are polycrystalline nature with zinc blende structure and having orientation along (111) plane. The value of grain size for (111) is calculated. The particle size increases with the increase of substrate temperature. (author)