Luminescence of gallium arsenide containing implanted vanadium

It has been proved that the ion implantation method is more effective as compared with the method of doping from melts when implanting V impurities into GaAs crystals. The analysis of GaAs:V crystal luminescence spectra measured in the temperature range from 4.2 to 270 K shows that emission of the V impurity in the 0.7 eV band represents a superposition of two different intercenter radiative transitions. By comparing, within the frameworks of the crystal field theory, the experimental emission spectum with different schemes of splitting the 3d2 and 3d3 levels it is possible to state that V2+ ions are responsible for radiative transitions; in that case both the excited and splitted ground states are within the forbidden zone