Published November 7, 2005
| Version v1
Journal article
Terahertz radiation from heavy-ion-irradiated In0.53Ga0.47As photoconductive antenna excited at 1.55 μm
Creators
- 1. Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Cite Scientifique, 59652 Villeneuve d'Ascq cedex (France)
- 2. Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR CNRS 8609, Universite Paris XI, 91405 Orsay cedex (France)
- 3. Institut d'Electronique Fondamentale, UMR CNRS 8622, Universite Paris XI, 91405 Orsay cedex (France)
Description
We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is less than 200 fs, the steady-state mobility is 490 cm2 V-1 s-1, and the dark resistivity is 3 Ω cm. The spectrum of the electric field radiating from the Br+-irradiated In0.53Ga0.47As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility
Additional details
Identifiers
- DOI
- 10.1063/1.2126110;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 87
- Journal Issue
- 19
- Journal Page Range
- p. 193510-193510.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37021664
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTENNAS; CARRIER LIFETIME; CARRIER MOBILITY; ELECTRIC FIELDS; GALLIUM ARSENIDES; HEAVY IONS; INDIUM ARSENIDES; ION BEAMS; IRRADIATION; OPTICAL PUMPING; RADIATION DOSES; SCATTERING; STEADY-STATE CONDITIONS; THZ RANGE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; DOSES; ELECTRICAL EQUIPMENT; EQUIPMENT; FREQUENCY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; IONS; LIFETIME; MOBILITY; PNICTIDES; PUMPING
Optional Information
- Notes
- (c) 2005 American Institute of Physics