Published 1990 | Version v1
Miscellaneous Metadata-only

(Al sub(x)Ga sub(l-x)) sub(.47)In sub(.53)As (0 ≤x≤1) layers growth on InP by MOCVD technique

Creators

  • 1. TELEBRAS, Campinas, SP (Brazil). Centro de Pesquisas
  • 2. Universidade Estadual de Campinas, SP (Brazil)

Description

Published in summary form only

Availability note (English)

Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.

Additional details

Additional titles

Original title (Portuguese)
Crescimento de camadas (Al sub(x)Ga sub(l-x)) sub(.47)In sub(.53)As (0≤x≤1) InP pela tecnica MOCVD

Publishing Information

Imprint Title
Proceedings of the 13. National Meeting on Condensed Matter Physics
Imprint Pagination
284 p.
Journal Page Range
p. 222.

Conference

Title
13. National Meeting on Condensed Matter Physics.
Dates
8-12 May 1990.
Place
Caxambu, MG (Brazil).

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
22039736
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
ALUMINIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; PHOTOLUMINESCENCE; X-RAY DIFFRACTION
Descriptors DEC
CHEMICAL COATING; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; EMISSION; LUMINESCENCE; PHOTON EMISSION; SCATTERING; SURFACE COATING