Published December 1995
| Version v1
Journal article
Effect of rapid thermal annealing on radiation hardening of MOS devices
Creators
- 1. CEA, Bruyeres-Le-Chatel (France). Centre d'Etudes de Bruyeres-Le-Chatel
- 2. CEA/DTA/LETI, Grenoble (France)
- 3. CNET/CNS, Meylan (France)
Description
The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected, data are in good agreement with a recently developed model of oxygen out-diffusion; (ii) the location across the wafer with a radial dependence, results could be related to stress induced by thermal gradient
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 42
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 1667-1673.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- 32. annual IEEE international nuclear and space radiation effects conference.
- Dates
- 17-21 Jul 1995.
- Place
- Madison, WI (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27045552
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ANNEALING; COMPARATIVE EVALUATIONS; EXPERIMENTAL DATA; MOS TRANSISTORS; RADIATION HARDENING; TEMPERATURE DEPENDENCE
- Descriptors DEC
- DATA; EVALUATION; HARDENING; HEAT TREATMENTS; INFORMATION; NUMERICAL DATA; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-950716--.