Published April 2002
| Version v1
Journal article
Nanostructure creation by ion bombardment of semiconductors and high-temperature superconductors
Creators
- 1. Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe RAN, Sankt-Peterburg (Russian Federation)
Description
The new process of the ion-stimulated modification of the near-the-surface area of certain semiconducting and high-temperature superconducting materials is identified. The layered nanostructure of the metal/dielectric/semiconductor or metal/dielectric/HTSC-type is obtained in the course of the modification instead of the initial uniform material. In comparison with the known structures the above ones are characterized by qualitatively much thinner layers and interfaces. The modification processes and properties of the obtained nanostructures are studied through the methods of the electron spectroscopy
Abstract (Russian)
Обнаружен новый процесс ионно-стимулированной модификации приповерхностной области некоторых полупроводниковых и ВТСП-материалов. В результате модификации вместо исходного однородного материала получается слоистая наноструктура металл/диэлектрик/полупроводник или металл/диэлектрик/ВТСП. По сравнению с известными, полученные структуры характеризуются качественно более тонкими слоями и интерфейсами. Процессы модификации и свойства получаемых наноструктур исследованы методами электронной спектроскопииAdditional details
Additional titles
- Original title (Russian)
- Создание наноструктур ионной бомбардировкой полупроводников и высокотемпературных сверхпроводников
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 66
- Journal Issue
- 4
- Journal Page Range
- p. 588-592
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- Ion-surface interaction-2001
- Original Conference Title
- XV Mezhdunarodnaya konferentsiya. Vzaimodejstvie ionov s poverkhnost'yu
- Acronym
- 15. International conference
- Dates
- Aug 2001
- Place
- Zvenigorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 35026084
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARGON IONS; BAND THEORY; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; HETEROJUNCTIONS; HIGH-TC SUPERCONDUCTORS; ION BEAMS; MIS TRANSISTORS; SPATIAL DISTRIBUTION; SURFACE PROPERTIES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; GALLIUM COMPOUNDS; IONS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTORS; TRANSISTORS; TYPE-II SUPERCONDUCTORS
Optional Information
- Notes
- 12 refs., 6 figs.