Published April 1, 2016
| Version v1
Journal article
First principles molecular dynamics simulation of graphene growth on Nickel (111) surface
Creators
- 1. Department of Physics, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto 860-8555 (Japan)
- 2. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Description
The mechanism of the graphene growth on the nickel (111) surface is studied using first principles molecular dynamics (MD) simulation. To investigate the effects of growth temperature and concentration of carbon atoms on the nickel (111) surface, the systems consisting 50%, 66.7%, and 100% of carbon concentration are annealed from 800 K, 1000 K, 1200 K, and 1500 K until room temperature. It is found from the MD simulation that the optimum temperature for the graphene growth is approximately 1000 K, although the graphene can also be grown at lower temperatures (∼800 K) in a high concentration of carbon atoms which is in good agreement with the experiment. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1757-899X/128/1/012032Additional details
Identifiers
Publishing Information
- Journal Title
- IOP Conference Series. Materials Science and Engineering (Online)
- Journal Volume
- 128
- Journal Issue
- 1
- Journal Page Range
- [7 p.]
- ISSN
- 1757-899X
Conference
- Title
- International conference on innovation in engineering and vocational education
- Dates
- 14 Nov 2015
- Place
- Bandung (Indonesia)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49085069
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; APPROXIMATIONS; CONCENTRATION RATIO; GRAPHENE; MOLECULAR DYNAMICS METHOD; NICKEL; SIMULATION; SURFACES
- Descriptors DEC
- CALCULATION METHODS; CARBON; DIMENSIONLESS NUMBERS; ELEMENTS; HEAT TREATMENTS; METALS; NONMETALS; TRANSITION ELEMENTS