Published April 1, 2016 | Version v1
Journal article

First principles molecular dynamics simulation of graphene growth on Nickel (111) surface

  • 1. Department of Physics, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto 860-8555 (Japan)
  • 2. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

Description

The mechanism of the graphene growth on the nickel (111) surface is studied using first principles molecular dynamics (MD) simulation. To investigate the effects of growth temperature and concentration of carbon atoms on the nickel (111) surface, the systems consisting 50%, 66.7%, and 100% of carbon concentration are annealed from 800 K, 1000 K, 1200 K, and 1500 K until room temperature. It is found from the MD simulation that the optimum temperature for the graphene growth is approximately 1000 K, although the graphene can also be grown at lower temperatures (∼800 K) in a high concentration of carbon atoms which is in good agreement with the experiment. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/128/1/012032

Additional details

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
128
Journal Issue
1
Journal Page Range
[7 p.]
ISSN
1757-899X

Conference

Title
International conference on innovation in engineering and vocational education
Dates
14 Nov 2015
Place
Bandung (Indonesia)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49085069
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; APPROXIMATIONS; CONCENTRATION RATIO; GRAPHENE; MOLECULAR DYNAMICS METHOD; NICKEL; SIMULATION; SURFACES
Descriptors DEC
CALCULATION METHODS; CARBON; DIMENSIONLESS NUMBERS; ELEMENTS; HEAT TREATMENTS; METALS; NONMETALS; TRANSITION ELEMENTS