Published 1987
| Version v1
Book
Electron reflectance and leakage of a multiquantum barrier
Creators
- 1. Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama 227
Description
The authors propose a multiquantum barrier (MQB) that can be used for the cladding with the higher barrier height necessary for high-performance semiconductor lasers. They describe a potential profile of the MQB consisting of several cavities with different barriers and wells. They show the reflectivity of an electron vs. its energy normalized by the potential barrier height, and leakage current density of the MQB vs. injected carrier density. Results are given and discussed
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- Proceedings of the conference on lasers and electro-optics
- Journal Page Range
- p. 56.
Conference
- Title
- OSA/IEEE conference on lasers and electro-optics (CLEO '87).
- Dates
- 27 Apr - 1 May 1987.
- Place
- Baltimore, MD (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19026915
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARRIER DENSITY; CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MATERIALS; OPTIMIZATION; PERFORMANCE; POTENTIALS; REFLECTION; SEMICONDUCTOR LASERS
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; MOBILITY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS
Optional Information
- Notes
- Imprint:Technical Paper TUJ3.