Published April 1983
| Version v1
Journal article
Indium effect on the properties of SnTe with varying degree of departure from stoichiometry
- 1. Khar'kovskij Politekhnicheskij Inst. (Ukrainian SSR)
Description
The nature of changes in the SnTe structural and electrophysical properties with varying degree of departure from stoichiometry following the Sn→In cation substitution is investigated in detail. The SnTe homogeneity region in the Sn-In-Te system is found to be oriented in the InTe direction with a certain departure towards Te. The electric effect of In introduced in the form of (Sn→In) substitution impurity into SnTe, with a fixed departure from stoichimetry, depends on the In concentration, which is explained by the possibility of indium variable valency manifestation
Additional details
Additional titles
- Original title (Russian)
- Влияние индия на свойства SnTe с различной степенью отклонения от стехиометрии
Publishing Information
- Journal Title
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Volume
- 19
- Journal Issue
- 4
- Series
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Page Range
- 573-577
- ISSN
- 0002-337X
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 15055606
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER DENSITY; INDIUM ADDITIONS; MICROHARDNESS; P-TYPE CONDUCTORS; QUANTITY RATIO; SOLUBILITY; THERMOELECTRIC PROPERTIES; TIN TELLURIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; HARDNESS; MATERIALS; MECHANICAL PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS
Optional Information
- Notes
- For English translation see the journal Inorganic Materials (USA).