Published 1989
| Version v1
Journal article
Atomic displacements of Si in the Si(111) √3x√3-B surface
- 1. State Univ. of New York, Albany, NY (USA)
Description
The atomic displacements of Si in the Si(111) √3 x √3-B surface have been studied using high energy He+ ion channeling at room temperature. The experimental results show large displacements parallel to the reconstructed surface, but smaller displacements perpendicular to the <110> axial direction. These results are compared with Monte-Carlo simulations. (author)
Additional details
Publishing Information
- Journal Title
- Radiation Effects and Defects in Solids
- Journal Volume
- 111-112
- Journal Issue
- 1-2
- Series
- Radiat. Eff. Defects Solids.
- Journal Page Range
- 125-129
- CODEN
- REDSE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 21033170
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; ATOMIC DISPLACEMENTS; DOPED MATERIALS; GALLIUM; HELIUM IONS; INDIUM; ION CHANNELING; SILICON; SURFACES
- Descriptors DEC
- CHANNELING; CHARGED PARTICLES; ELEMENTS; IONS; MATERIALS; METALS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMIMETALS