Preparation of implanted nitrogen targets

In the preparation of nitrogen targets for use in nuclear reaction studies, the collection curves of 14N + ions implanted into tantalum at the energies 10, 50 and 100 keV have been determined by means of backscattering of 4He+ ions. At each implantation energy, the saturation value of (60 +- 2) at.% was obtained for nitrogen atoms embedded in tantalum. The usability of the targets was studied using a 14N(p, γ)15O resonance. The preparation, properties and uses of implanted targets are discussed. (Auth.)