Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design
- 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
- 2. Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Description
We demonstrate a technique of temperature compensation for 1.3μm InAs/GaAs quantum-dot (QD) lasers by facet coating design. The key point of the technique is to make sure that the mirror loss of the lasers decreases as the temperature rises. To realize this, we design a type of facet coating by shifting the central wavelength of the facet coating from 1310nm to 1480nm, whose reflectivity increases as the emission wavelength of the lasers red-shifts. Consequently, the laser with the new facet coating exhibits a characteristic temperature doubled in size and a more stable slope efficiency in the temperature range from 10°C to 70°C, compared with the traditional one with a temperature-independent mirror loss. (fundamental areas of phenomenology(including applications))
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/28/4/044201Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 28
- Journal Issue
- 4
- Journal Page Range
- [3 p.]
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45004714
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; DESIGN; EFFICIENCY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; MIRRORS; QUANTUM DOTS; RED SHIFT; REFLECTIVITY; SEMICONDUCTOR LASERS; THRESHOLD CURRENT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; EVALUATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SURFACE PROPERTIES