Influence of Sb doping on crystal structure and electrical property of SnO2 nanoparticles prepared by chemical coprecipitation
Creators
- 1. Engineering Research Center of Optoelectronic Materials and Devices, Education Department of Liaoning Province, Dalian 116028 (China)
- 2. School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China)
Description
Sb doped SnO2 (ATO) nanoparticles with Sb doping concentrations ranging from 0% to 20% (Sb/Sb+Sn) have been prepared by chemical coprecipitation using metallic Sn and SbCl3 as raw materials. The influence of Sb doping concentration on crystal structure and electrical property was studied in detail. Results indicated that all ATO nanoparticles possessed the same tetragonal rutile structure as that of bulk SnO2. The average crystal size of the ATO nanoparticles decreased from 16 to 7 nm by increasing the Sb doping concentration. The unit-cell volume of ATO nanoparticles was either expanded or contracted, strongly depending on the Sb doping concentration. The electrical resistivity decreased sharply from 111 to minimum of 1.05 Ω cm when the Sb doping concentration was increased from 0% to 15% and then increased slightly to 1.42 Ω cm when the Sb doping concentration was increased from 15% to 20%. Finally, high resolution X-ray photoelectron spectroscopy (XPS) measurement was employed to investigate the valence state of Sb in samples with various Sb doping levels.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2011.03.065Additional details
Identifiers
- DOI
- 10.1016/j.physb.2011.03.065;
- PII
- S0921-4526(11)00296-1;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 406
- Journal Issue
- 11
- Journal Page Range
- p. 2303-2307
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42075497
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANTIMONY ADDITIONS; ANTIMONY CHLORIDES; COPRECIPITATION; CRYSTAL STRUCTURE; CRYSTALS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; NANOSTRUCTURES; RESOLUTION; TIN OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALLOYS; ANTIMONY ALLOYS; ANTIMONY COMPOUNDS; CHALCOGENIDES; CHLORIDES; CHLORINE COMPOUNDS; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; HALIDES; HALOGEN COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; PRECIPITATION; SEPARATION PROCESSES; SPECTROSCOPY; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.