A −188 V 7.2 Ω · mm2, P-channel high voltage device formed on an epitaxy-SIMOX substrate

This paper proposes a new n+-charge island (NCI) P-channel lateral double diffused metal-oxide semiconductor (LDMOS) based on silicon epitaxial separation by implantation oxygen (E-SIMOX) substrate. Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n+-regions on the interface of a buried oxide layer, and therefore the electric field of a dielectric buried layer (EI) is enhanced by these holes effectively, leading to an improved breakdown voltage (BV). The VB and EI of the NCI P-channel LDMOS increase to −188 V and 502.3 V/μm from −75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer, respectively. The influences of structure parameters on the proposed device characteristics are investigated by simulation. Moreover, compared with the conventional device, the proposed device exhibits low special on-resistance. (condensed matter: electronic structure, electrical, magnetic, and optical properties)