MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode

This paper reports the metalorganic vapor phase epitaxy (MOVPE) of InN on GaN/sapphire templates by pulsed growth mode. Photoluminescence analysis of the films has been performed both at room temperature (T=300 K) and low temperature (T=77 K). At room temperature, the band gap of InN is measured as 0.77 eV which is observed to have strong dependence on the growth temperature of the film. The appearance of otherwise less dominant transitions is associated to defects related luminescence from the films grown at relatively low growth temperatures. The electron mobility of 681 cm2/(V s) is obtained for InN alloy grown under optimal condition. The X-ray diffraction (XRD) analysis, structural quality and the evolution of the surface morphology of thin InN films have also been studied in the context of the given growth conditions. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)