Published November 22, 2005 | Version v1
Journal article

Pattern formation under residual compressive stress in free sustained aluminum films

  • 1. Department of Physics, China Jiliang University, Hangzhou 310018 (China) and Department of Physics, Zhejiang University, Hangzhou 310027 (China)
  • 2. Department of Physics, Zhejiang University, Hangzhou 310027 (China)
  • 3. Department of Physics, Taizhou University, Linhai 317000 (China)

Description

A nearly free sustained aluminum (Al) film system has been successfully fabricated by vapor phase deposition of Al atoms on silicone oil surfaces and an unusual type of ordered patterns at the micrometer scale has been systematically studied. The ordered patterns are composed of a large number of parallel key-shaped domains and possess a sandwiched structure. The nucleation and growth of the patterns are very susceptible to the growth period, deposition rate, nominal film thickness and location of the film. The experiment shows that the ordered patterns are induced by the residual compressive stress in the film owing to contraction of the liquid surface after deposition. The appearance of these stress relief patterns generally represents the stress distribution in the nearly free sustained Al films, which mainly results from the characteristic boundary condition and the nearly zero adhesion of the solid-liquid interface

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.03.057;
PII
S0040-6090(05)01158-2;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
491
Journal Issue
1-2
Journal Page Range
p. 311-316
ISSN
0040-6090
CODEN
THSFAP

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37023116
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM; BOUNDARY CONDITIONS; DEPOSITION; INTERFACES; SILICONES; STRESSES; THIN FILMS
Descriptors DEC
ELEMENTS; FILMS; METALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; POLYMERS; SILOXANES

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.