Effect of force fields on radiation-induced defect formation in silicon under electron irradiation of SiO2-Si structures

Profiles of vacancy nature defects near silicon surface coated by oxide film after structure irradiation by 4 MeV energy electron beam are investigated using DLTS technique. It is shown that 'pulling' of radiation distortions in crystal depth is related to the effect of elastic stresses in Si-SiO2 system while electrical origin forces induced by charge in oxide and at Si-SiO2 interface may result in occurrence of nonmonotonic distribution of radiation defects within SCV limits. Model of secondary defect formation is suggested. Calculation of the effective force affecting flow of primary point defects in silicon coated by different thickness oxide film is conducted. Estimation of value of quasichemical reaction rate of divacancy formation is obtained