Published 2017 | Version v1
Book

Structural, optical and vibrational properties of sol-gel deposited ZnO thin films

  • 1. Advanced Electronic and Nanomaterials Laboratory, Department of Physics, Jamia Millia Islamia University, New Delhi-110025 (India)
  • 2. Department of Materials and Ceramic Engineering, University of Aveiro, 3810-193, Averio (Portugal)

Description

In the present study, poly crystalline ZnO thin films fabricated on ultrasonically cleaned glass substrate by sol-gel spin coating technique. X-Ray diffraction (XRD), UV-Visible spectroscopy (UV-Vis.), scanning electron microscopy (SEM), and Raman spectroscopy are used to characterize the fabricated ZnO thin films. The X-Ray diffraction (XRD) pattern confirmed that the ZnO thin films are polycrystalline in nature. It is found hexagonal wurtzite structure with a preferential orientation of (002) plane at 2θ =34.4°. The absorbance spectra of the synthesized ZnO thin films showed that maximum absorbance in the wavelength range of 200 to 280 nm. The optical band gap of the synthesized ZnO thin films is found to be 3.18 eV, direct allowed transition. The Raman spectra of ZnO thin films confirmed that the space group of the hexagonal wurtzite ZnO thin films belongs to C46v. The peak at 433 cm-1 is attributed to ZnO optical phonon E2 (high) mode, which also demonstrates that the ZnO thin films are highly c-axis oriented. The peak at 391 cm-1 corresponds to A1(TO) phonons, which can result from the defects such as oxygen vacancy, zinc interstitial or their complexes and free carriers. (author)

Part of:
Proceedings of the seventeenth international conference on thin films: abstracts

Additional details

Publishing Information

Publisher
CSIR-National Physical Laboratory
Imprint Place
New Delhi (India)
Imprint Title
Proceedings of the seventeenth international conference on thin films: abstracts
Imprint Pagination
236 p.
Journal Page Range
p. 92

Conference

Title
17. international conference on thin films
Acronym
ICTF-2017
Dates
13-17 Nov 2017
Place
New Delhi (India)

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
52048037
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BAND THEORY; COATINGS; CRYSTALLOGRAPHY; DEPOSITION; GRADED BAND GAPS; SOL-GEL PROCESS; STRUCTURAL CHEMICAL ANALYSIS; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; FILMS; OXIDES; OXYGEN COMPOUNDS; SCATTERING; ZINC COMPOUNDS

Optional Information