Published May 29, 2006 | Version v1
Journal article

Negative effective mass induced by in-plane magnetic fields in n-doped wide quantum wells

  • 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)

Description

By solving the coupled Schroedinger and Poisson's equations self-consistently, we have theoretically investigated the in-plane magnetic-field-induced negative effective mass (NEM) in n-doped wide quantum wells. The NEM originates from the interaction of Hartree potential and magnetic-field-introduced potential. Without n-type doping, no NEM section arises at any magnetic field densities. The value of NEM and the width of NEM section can be effectively adjusted by magnetic field, electrical field, and doping concentration, which make it possible to utilize the above system to realize the tunable terahertz source

Additional details

Identifiers

DOI
10.1016/j.physleta.2006.01.057;
PII
S0375-9601(06)00144-7;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
354
Journal Issue
3
Journal Page Range
p. 226-231
ISSN
0375-9601
CODEN
PYLAAG

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37068847
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
DOPED MATERIALS; EFFECTIVE MASS; ELECTRIC FIELDS; MAGNETIC FIELDS; POISSON EQUATION; POTENTIALS; QUANTUM WELLS; SCHROEDINGER EQUATION
Descriptors DEC
DIFFERENTIAL EQUATIONS; EQUATIONS; MASS; MATERIALS; NANOSTRUCTURES; PARTIAL DIFFERENTIAL EQUATIONS; WAVE EQUATIONS

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.