Published May 29, 2006
| Version v1
Journal article
Negative effective mass induced by in-plane magnetic fields in n-doped wide quantum wells
Creators
- 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)
Description
By solving the coupled Schroedinger and Poisson's equations self-consistently, we have theoretically investigated the in-plane magnetic-field-induced negative effective mass (NEM) in n-doped wide quantum wells. The NEM originates from the interaction of Hartree potential and magnetic-field-introduced potential. Without n-type doping, no NEM section arises at any magnetic field densities. The value of NEM and the width of NEM section can be effectively adjusted by magnetic field, electrical field, and doping concentration, which make it possible to utilize the above system to realize the tunable terahertz source
Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2006.01.057;
- PII
- S0375-9601(06)00144-7;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 354
- Journal Issue
- 3
- Journal Page Range
- p. 226-231
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37068847
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DOPED MATERIALS; EFFECTIVE MASS; ELECTRIC FIELDS; MAGNETIC FIELDS; POISSON EQUATION; POTENTIALS; QUANTUM WELLS; SCHROEDINGER EQUATION
- Descriptors DEC
- DIFFERENTIAL EQUATIONS; EQUATIONS; MASS; MATERIALS; NANOSTRUCTURES; PARTIAL DIFFERENTIAL EQUATIONS; WAVE EQUATIONS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.