Published May 24, 2006
| Version v1
Journal article
Transition pathway in GaAs under uniaxial stress: an ab initio study
Creators
- 1. Department of Physics, University of Texas at El Paso, El Paso, TX 79968 (United States)
Description
We study the behaviour of GaAs under a uniaxial compression using an ab initio constant-pressure technique and find that GaAs undergoes a first-order phase transition to a side-disordered orthorhombic Imm 2 structure via an intermediate state having the space group of I4-barm2. The transition pathway and mechanism under uniaxial stress are found to be considerably different from those under the hydrostatic compression
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/18/4887/cm6_20_013.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/18/4887/cm6_20_013.pdf;
- DOI
- 10.1088/0953-8984/18/20/013;
- PII
- S0953-8984(06)21498-X;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 18
- Journal Issue
- 20
- Journal Page Range
- p. 4887-4894
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37061046
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMPRESSION; GALLIUM ARSENIDES; INTERMEDIATE STATE; ORTHORHOMBIC LATTICES; PHASE TRANSFORMATIONS; PRESSURE DEPENDENCE; SPACE GROUPS; STRESSES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; PNICTIDES; SYMMETRY GROUPS