Published March 2006
| Version v1
Journal article
Pattern formation on InP(1 1 1) surfaces after ion implantation
Creators
- 1. Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)
Description
We have investigated the formation of nanosized structures on InP(1 1 1) surfaces after 1.5 MeV Sb implantation. Scanning probe microscope (SPM) has been utilized to investigate the size, height and the density distributions of the nanostructures as a function of ion fluence. We observe nanostructures smaller than 100 nm and lower than 4 nm at all fluences. Moreover in large nanostructures we observe agglomeration of several smaller structures. We have also investigated the rms surface roughness of the InP(1 1 1) surfaces after MeV implantations
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2005.11.064;
- PII
- S0168-583X(05)01914-2;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 244
- Journal Issue
- 1
- Journal Page Range
- p. 69-73
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- Indo-German workshop on synthesis and modifications of nano-structured materials by energetic ion beams
- Dates
- 20-24 Feb 2005
- Place
- New Delhi (India)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37069647
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AGGLOMERATION; ATOMIC FORCE MICROSCOPY; DENSITY; INDIUM PHOSPHIDES; ION IMPLANTATION; IONS; MEV RANGE 01-10; MICROSCOPES; NANOSTRUCTURES; PROBES; ROUGHNESS; SURFACES
- Descriptors DEC
- CHARGED PARTICLES; ENERGY RANGE; INDIUM COMPOUNDS; MEV RANGE; MICROSCOPY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.