Electron-irradiated extrinsic silicon detectors for 3-5 μm focal-plane arrays

Electron-irradiated silicon photoconductors have been fabricated and characterised for focal-plane array applications. The photoresponse has a peak at 4 μm where Dsub(lambda)* values of 2 x 1010 cm Hzsup(1/2) W-1 have been measured at 80 K. These characteristics are maintained to 100 K before thermal generation becomes significant. The devices are stable in processing and storage up to at least 1000C. Since no deep-level chemical dopants are involved, dedicated silicon processing facilities are not required. (author)