Published December 1971
| Version v1
Journal article
Electronic recovery from radiation effects in CMNOS structures
Creators
Description
We consider the effects of ionizing radiation on Complementary Metal-Nitride-Oxide-Silicon structures for oxide thicknesses in the range of 20-50Å. The bi-directional radiation-induced threshold-voltage shifts in CMNOS structures are interpreted in terms of charge accumulation at the nitride-oxide interface. The electronic recovery of pre-irradiation threshold voltage levels by carrier transport through the thin oxide is shown experimentally.
Additional details
Identifiers
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 18
- Journal Issue
- 6
- Series
- IEEE (Inst. Electr. Electron. Eng.) Trans. Nucl. Sci.
- Journal Page Range
- 126-130
- ISSN
- 0018-9499
Conference
- Title
- Annual conference on nuclear and space radiation effects.
- Dates
- 20 Jul 1971.
- Place
- Durham, N. H.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 4041121
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES
- Descriptors DEC
- PHYSICAL PROPERTIES
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent