Published April 1, 2012 | Version v1
Journal article

Secondary electron emission induced by channeled relativistic electrons in a (1 1 0) Si crystal

  • 1. Department of Theoretical and Experimental Physics, National Research Tomsk Polytechnic University, 30, Lenin Avenue, Tomsk 634050 (Russian Federation)
  • 2. Department of Theoretical Physics, Tomsk State Pedagogical University, 60, Kievskaya Street, Tomsk 634041 (Russian Federation)

Description

A new effect that accompanies electrons channeled in a crystal is considered. This phenomenon was previously predicted was called channeling secondary electron emission (CSEE). The exact CSEE cross-section on the basis of using the exact Bloch wave function of electron channeled in a crystal is obtained. The detailed investigation of CSEE cross-section is performed. It is shown that angular distribution of electrons emitted due to CSEE has a complex form.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2012.01.006

Additional details

Identifiers

DOI
10.1016/j.nimb.2012.01.006;
PII
S0168-583X(12)00021-3;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
276
Journal Page Range
p. 14-18
ISSN
0168-583X
CODEN
NIMBEU

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.