Published 2004 | Version v1
Miscellaneous Metadata-only

Defect structure of InAl(Ga)As/InP layers

Creators

  • 1. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 2. Institute of Electron Technology, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts of International Conference on Experimental and Computing Methods in High Resolution Diffraction Applied for Structure Characterization of Modern Materials - HREDAMM

Additional details

Publishing Information

Imprint Title
Abstracts of International Conference on Experimental and Computing Methods in High Resolution Diffraction Applied for Structure Characterization of Modern Materials - HREDAMM
Imprint Pagination
98 p.
Journal Page Range
p. 72

Conference

Title
International Conference on Experimental and Computing Methods in High Resolution Diffraction Applied for Structure Characterization of Modern Materials - HREDAMM
Dates
13-17 Jun 2004
Place
Zakopane (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
37011113
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ALUMINIUM COMPOUNDS; ARSENIDES; ATOMIC FORCE MICROSCOPY; CHEMICAL COMPOSITION; CRYSTAL DEFECTS; ETCHING; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; STRESS RELAXATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; INDIUM COMPOUNDS; MICROSCOPY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RELAXATION; SCATTERING; SURFACE FINISHING

Optional Information