Published October 2012 | Version v1
Journal article Metadata-only

Electronic Structures of InGaN2 Nanotubes

Creators

  • 1. State Key Laboratory for Mesoscopic Physics, and Department of Physics, Peking University, Beijing 100871 (China)
  • 2. Department of Physics, University of Nebraska at Omaha, Omaha, Nebraska 68182-0266 (United States)
  • 3. College of Physics and Electron Information, Inner Mongolia Normal University, Hohhot 010022 (Mongolia)

Description

We investigate the electronic structures of InGaN2 nanotubes (NTs) using first-principles calculations. It is found that all four types of InGaN2 NTs, with the same diameter, have similar stability. The total energy of the per unit InGaN2 NT depends on its diameter due to the curvature effect. The zigzag (armchair) InGaN2 NTs have direct (indirect) band gaps. The band gap increases for all of the InGaN2 NTs when their diameters increase. The valence band maximum (VBM) states of the InGaN2 NTs are p-like states localised around N atoms. The p-like VBM states in zigzag (armchair) InGaN2 NTs are perpendicular (parallel) to the tube axis

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/29/10/107301

Additional details

Identifiers

DOI
10.1088/0256-307X/29/10/107301;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
29
Journal Issue
10
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45003666
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ATOMS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM NITRIDES; INDIUM COMPOUNDS; NANOTUBES; STABILITY; VALENCE
Descriptors DEC
GALLIUM COMPOUNDS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES