Published April 10, 2007 | Version v1
Journal article

Controlling Mn concentration into CdTe quantum dots

  • 1. CEA-CNRS-UJF Group 'Nanophysique et Semiconducteurs', Univ. J. Fourier Grenoble, Laboratoire de Spectrometrie Physique, BP 87, 38402 St Martin d'Heres and CEA/DRFMC/SP2M, 17 av. des Martyrs 38000 Grenoble (France)

Description

Method of growth to get one single Mn in self-assembled semiconductors Quantum Dot (QD) is presented. A simple model proves that a very low Mn density is needed prior to the QD nucleation. This was reached by inserting a thin ZnTe spacer between a Zn1-xMnxTe buffer and the CdTe QD layer. Control of Mn ions density is made by changing the thickness of the ZnTe spacer, with good reproducibility. Qualitative and quantitative comparison of optical spectra for different samples assess this original method of growth

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
893
Journal Issue
1
Journal Page Range
p. 91-92
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
28. international conference on the physics of semiconductors
Acronym
ICPS 2006
Dates
24-28 Jul 2006
Place
Vienna (Austria)

Optional Information

Notes
(c) 2007 American Institute of Physics