Published September 1, 2020 | Version v1
Journal article

On the simulation of the hysteresis loop of polycrystalline PZT thin films

  • 1. Analog, MEMS and Sensors Group R & D, STMicroelectronics, Agrate Brianza and Cornaredo (Italy)
  • 2. Department of Chemistry, Materials and Chemical Engineering, Politecnico di Milano, Milano (Italy)
  • 3. Institute for Applied Materials, Karlsruhe Institute of Technology, Karlsruhe (Germany)
  • 4. Department of Civil and Environmental Engineering, Politecnico di Milano, Milano (Italy)

Description

We investigate experimentally and numerically the polarization hysteresis loop of a PZT thin film utilized in MEMS actuators. A fully coupled electromechanical phase-field technique is employed for the numerical prediction part, starting from a simplified model of the thin film proposed on the basis of several experimental evidences. It is shown that polycrystalline nature of the film plays a fundamental role. In particular the simulations demonstrate that grains with dielectric interfaces and stochastic orientation of the crystallographic directions have a significant impact on the overall hysteresis loop. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-665X/ab9e0e

Additional details

Identifiers

Publishing Information

Journal Title
Smart Materials and Structures (Print)
Journal Volume
29
Journal Issue
9
Journal Page Range
[10 p.]
ISSN
0964-1726

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53045251
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ACTUATORS; CRYSTALLOGRAPHY; DIELECTRIC MATERIALS; HYSTERESIS; INTERFACES; MEMS; ORIENTATION; POLARIZATION; POLYCRYSTALS; PZT; SIMULATION; STOCHASTIC PROCESSES; THIN FILMS
Descriptors DEC
CRYSTALS; FILMS; LEAD COMPOUNDS; MATERIALS; OXYGEN COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONATES; ZIRCONIUM COMPOUNDS