Published January 2012
| Version v1
Journal article
Molecular interactions on epitaxial graphene
Creators
- 1. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)
Description
This paper reviews our recent work on molecular interactions on epitaxial graphene (EG) grown on 6H-SiC(0001). A major challenge in graphene-based devices is opening the energy band gap and doping. Molecular functionalization of graphene is one approach to modifying its electronic properties. Such surface transfer doping relies on charge separation at interfaces, and represents a valuable tool for the controlled and non-destructive doping of graphene, thereby facilitating the development of hybrid organic-graphene nanoelectronics. We have also demonstrated molecular self-assembly of bimolecular systems on EG and graphite.
Availability note (English)
Available from http://dx.doi.org/10.1088/0031-8949/2012/T146/014007Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Scripta (Online)
- Journal Volume
- 2012
- Journal Issue
- T146
- Journal Page Range
- [7 p.]
- ISSN
- 1402-4896
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44005705
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARBON; EPITAXY; GRAPHITE; HONEYCOMB STRUCTURES; INTERACTIONS; INTERFACES; LAYERS; MOLECULES; SILICON CARBIDES; SURFACES
- Descriptors DEC
- CARBIDES; CARBON; CARBON COMPOUNDS; CRYSTAL GROWTH METHODS; ELEMENTS; MECHANICAL STRUCTURES; MINERALS; NONMETALS; SILICON COMPOUNDS