Pulsed laser deposition of crystalline ZrC thin films

ZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique under various conditions. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), X-ray diffraction and reflectivity, spectroscopic ellipsometry, and four point probe measurements were used to characterize the properties of the deposited films. It has been found that crystalline films could be grown only by using laser fluences higher than 5 J/cm2 and substrate temperatures in excess of 500 deg. C. For a fluence of 10 J/cm2 and a substrate temperature of 700 deg. C, cubic ZrC films (a = 0.469 nm) exhibiting a (200)-texture were deposited under vacuum or low pressure C2H2 atmosphere. These films were smooth, with surface roughness values below 1.0 nm and mass densities around the tabulated value of 6.7 g/cm3. AES depth profiling investigations showed oxygen contamination around 7% in the bulk region. Despite the relatively high levels of oxygen contamination, the deposited ZrC films were very conductive. The use of a low C2H2 pressure atmosphere during deposition had a small beneficial effect on crystallinity and stoichiometry of the films