Published February 1983
| Version v1
Journal article
V sub(ga) and Cu in GaP through the MS-X sub(α) with clusters of 29 atoms
Creators
- 1. Brasilia Univ. (Brazil). Dept. de Fisica
- 2. Sao Paulo Univ. (Brazil). Inst. de Fisica
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Rev. Bras. Fis.
- Journal Volume
- especial)
- Series
- Rev. Bras. Fis.
- Journal Page Range
- 434
- ISSN
- 0374-4922
Conference
- Title
- 1. Brazilian School on Semiconductor Physics.
- Dates
- 31 Jan - 11 Feb 1983.
- Place
- Campinas, SP (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 16079043
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- COPPER ADDITIONS; ELECTRONIC STRUCTURE; GALLIUM PHOSPHIDES; MULTIPLE SCATTERING; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; POINT DEFECTS; SCATTERING
Optional Information
- Notes
- Published in summary form only.