Published February 1983 | Version v1
Journal article

V sub(ga) and Cu in GaP through the MS-X sub(α) with clusters of 29 atoms

  • 1. Brasilia Univ. (Brazil). Dept. de Fisica
  • 2. Sao Paulo Univ. (Brazil). Inst. de Fisica

Description

no abstract available

Additional details

Publishing Information

Journal Title
Rev. Bras. Fis.
Journal Volume
especial)
Series
Rev. Bras. Fis.
Journal Page Range
434
ISSN
0374-4922

Conference

Title
1. Brazilian School on Semiconductor Physics.
Dates
31 Jan - 11 Feb 1983.
Place
Campinas, SP (Brazil).

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
16079043
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
COPPER ADDITIONS; ELECTRONIC STRUCTURE; GALLIUM PHOSPHIDES; MULTIPLE SCATTERING; VACANCIES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; POINT DEFECTS; SCATTERING

Optional Information

Notes
Published in summary form only.