Published October 15, 2010
| Version v1
Journal article
The essentials for the control of charge-orbital ordering in thin films of perovskite manganites
Creators
- 1. Fuji Electric Advanced Technology Co., Ltd., Tokyo 191-8502 (Japan)
- 2. CREST, Japan Science and Technology Agency, Saitama 332-0012 (Japan)
- 3. Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Tokyo 153-8904 (Japan)
- 4. Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan)
Description
Gigantic responses arising from the melting of charge-orbital ordering (COO) in perovskite manganites have been attractive both in material science and technologies. We review the essentials to realize such phenomena in a thin film form aiming at a possible application to correlated electron devices, namely, the role of epitaxial strain on (1 1 0) substrates. The crucial issues in designing the correlated electron interfaces of (0 0 1), (1 1 0), and (2 1 0) are also discussed. In addition, the epitaxial growth of high-Tco materials such as (Bi, Sr)MnO3 and A-site ordered SmBaMn2O6 thin films is described, which is indispensable towards room temperature operation of correlated electron devices.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2010.02.009Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2010.02.009;
- PII
- S0921-5107(10)00094-2;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 173
- Journal Issue
- 1-3
- Journal Page Range
- p. 51-56
- ISSN
- 0921-5107
- CODEN
- MSBTEK
Conference
- Title
- 3. international conference on science and technology of advanced ceramics
- Acronym
- STAC-3
- Dates
- 16-18 Jun 2009
- Place
- Yokohama (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43030378
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BARIUM; BISMUTH; CONTROL; ELECTRON CORRELATION; EPITAXY; INTERFACES; MANGANESE; MANGANESE OXIDES; PEROVSKITE; SAMARIUM; STRONTIUM; SUBSTRATES; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METALS; CHALCOGENIDES; CORRELATIONS; CRYSTAL GROWTH METHODS; ELEMENTS; FILMS; MANGANESE COMPOUNDS; METALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PEROVSKITES; RARE EARTHS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.