Atomistic growth phenomena of reactively sputtered RuO2 and MnO2 thin films
- 1. Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, 52074 Aachen (Germany)
Description
We have synthesized RuO2 and MnO2 thin films under identical growth conditions using reactive DC sputtering. Strikingly different morphologies, namely, the formation of RuO2 nanorods and faceted, nanocrystalline MnO2, are observed. To identify the underlying mechanisms, we have carried out density functional theory based molecular dynamics simulations of the growth of one monolayer. Ru and O2 molecules are preferentially adsorbed at their respective RuO2 ideal surface sites. This is consistent with the close to defect free growth observed experimentally. In contrast, Mn penetrates the MnO2 surface reaching the third subsurface layer and remains at this deep interstitial site 3.10 Å below the pristine surface, resulting in atomic scale decomposition of MnO2. Due to this atomic scale decomposition, MnO2 may have to be renucleated during growth, which is consistent with experiments
Additional details
Identifiers
- DOI
- 10.1063/1.4926414;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 118
- Journal Issue
- 1
- Journal Page Range
- p. 015302-015302.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47060832
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DENSITY FUNCTIONAL METHOD; MANGANESE OXIDES; MOLECULAR DYNAMICS METHOD; NANOSTRUCTURES; RUTHENIUM OXIDES; SIMULATION; SPUTTERING; SURFACES; THIN FILMS
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; FILMS; MANGANESE COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; RUTHENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Notes
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